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CSD17483F4

Manufacturer	Texas Instruments Incorporated
Description	Trans MOSFET N-CH 30V 1.5A 3-Pin PicoStar T/R MOSFET N-CH 30V 1.5A 3PICOSTAR MOSFET 30V N-CH Pwr MOSFET 30V, N-Channel FemtoFET™MOSFET Texas Instruments FemtoFET 系列 N沟道 MOSFET 晶体管 T, 1.5 A, Vds=30 V, 3针 PICOSTAR封装
Category	Discrete Semiconductor ComponentsDiscrete SemiconductorsDIACs - Trigger Diodes

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Tradename	FemtoFET	Standard Package	3,000
Factory Pack Quantity	3000

RoHS

RoHS Compliant

Part Status

ACTIVE

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	3.4 ns
Vgs (Max)	12	FET Feature	Logic Level Gate
Gate Charge	1010 pC	Power - Max	500mW
Power - Rated	500 mW	Delay Time - ON	3.3 ns
Output Function	增强	Rise Time (Typ)	1.3 ns
Transistor Type	N-Channel	Delay Time - OFF	10.6 ns
Delay to 1st Tap	10.6 ns	Voltage - Supply	30 V
Number of Channels	1 Channel	Number of Elements	1
Resistance - Input	370 mΩ	Vgs(th) (Max) @ Id	1.1V @ 250µA
Current Rating (Max)	Catalog	Rds On (Max) @ Id, Vgs	240 mOhm @ 500mA, 8V
Power - Average Forward	500 mW	Power Dissipation (Max)	0.5 W
Vce(on) (Max) @ Vge, Ic	30 V	Logic Voltage - VIL, VIH	Yes
On-State Resistance (Max)	260 mOhms	Current Transfer Ratio (Min)	2.4 S
Gate Charge (Qg) (Max) @ Vgs	1.3nC @ 4.5V	Current - Peak Pulse (8/20us)	5
Switch Time (Ton, Toff) (Max)	3.3 ns	Drain to Source Voltage (Vdss)	30V
Voltage - Gate Trigger (Vgt) (Max)	12 V	Current - Drain (Idss) @ Vds (Vgs=0)	1.5 A
Input Capacitance (Ciss) (Max) @ Vds	190pF @ 15V	Current - Continuous Drain (Id) @ 25degC	1.5A (Ta)

Temperature - Test

-55 to 150

Operating Temperature

- 55 C

Online Document

PDF Document

PDF Document

Online Document