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CSD16411Q3

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RoHS	Contains lead / RoHS compliant by exemption	SVHC	:No SVHC (16-Dec-2013)
EU RoHS	Compliant	Tariff No	85423190
Part Status	ACTIVE

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	3.1 ns
Vgs (Max)	16 V	FET Feature	Standard
Gate Charge	2.9 nC	Power - Max	2.7W
Power - Rated	2.7 W	Fall Time (Typ)	3.1 ns
Rise Time (Typ)	7.8 ns	Transistor Type	N-Channel
Delay to 1st Tap	6 ns	Number of Elements	1
Vgs(th) (Max) @ Id	2.3V @ 250µA	Voltage - Breakdown	25 V
Voltage - Threshold	:2V	Current Rating (Max)	:56A
Resistance - RDS(On)	:8mohm	Contact Voltage (Max)	:25V
Rds On (Max) @ Id, Vgs	10@10V mOhm	Power Dissipation (Max)	:2.7W
Propagation Delay (Max)	7.8 ns	Vce(on) (Max) @ Vge, Ic	25 V
Logic Voltage - VIL, VIH	Yes	On-State Resistance (Max)	10@10V
Current Transfer Ratio (Min)	30 S	Gate Charge (Qg) (Max) @ Vgs	3.8nC @ 4.5V
Current - Peak Pulse (8/20us)	138	Switch Time (Ton, Toff) (Max)	5.3 ns
Drain to Source Voltage (Vdss)	25V	Current - Peak Pulse (10/1000us)	14 A
Voltage - Gate Trigger (Vgt) (Max)	- 12 V, + 16 V	Current - Drain (Idss) @ Vds (Vgs=0)	56 A
Input Capacitance (Ciss) (Max) @ Vds	570pF @ 12.5V	Current - Continuous Drain (Id) @ 25degC	14A (Ta), 56A (Tc)

Series	CSD16411Q3	Software	SLPS206A
Channel Type	Enhancement	Configuration	Single Quad Drain Triple Source
Pattern Number	Y	Utilized IC / Part	View
Other Specifications	0.7	Printed Circuit Board	8