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CSD16410Q5A

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FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	3.6 ns
Vgs (Max)	16 V	FET Feature	Logic Level Gate
Gate Charge	3.9 nC	Power - Max	3W
Noise Figure	Not Required dB	Power - Rated	3 W
Power - Output	Not Required dB	Fall Time (Typ)	3.6 ns
Frequency - Max	Not Required MHz	Rise Time (Typ)	10.7 ns
Transistor Type	N-Channel	Delay to 1st Tap	6.5 ns
Number of Elements	1	Vgs(th) (Max) @ Id	2.3V @ 250µA
Voltage - Breakdown	25 V	Voltage - Threshold	:1.9V
Current Rating (Max)	:59A	Resistance - RDS(On)	:6.8mohm
Contact Voltage (Max)	:25V	Rds On (Max) @ Id, Vgs	8.5@10V mOhm
Power Dissipation (Max)	:3W	Propagation Delay (Max)	10.7 ns
Vce(on) (Max) @ Vge, Ic	25 V	Current Drain (Id) - Max	16 A
Logic Voltage - VIL, VIH	Yes	On-State Resistance (Max)	0.0085 ohm
Current Transfer Ratio (Min)	38 S	Gate Charge (Qg) (Max) @ Vgs	5nC @ 4.5V
Current - Peak Pulse (8/20us)	158	DC Resistance (DCR) - Primary	38 S
Switch Time (Ton, Toff) (Max)	6.2 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	25V	Current - Peak Pulse (10/1000us)	16 A
Voltage - Gate Trigger (Vgt) (Max)	- 12 V, + 16 V	Current - Drain (Idss) @ Vds (Vgs=0)	59 A
Input Capacitance (Ciss) (Max) @ Vds	740pF @ 12.5V	Current - Continuous Drain (Id) @ 25degC	16A (Ta), 59A (Tc)

Type	Power MOSFET	Series	CSD16410Q5A
DELETED	Compliant	Polarity	N
Software	SLPS205A	Channel Type	Enhancement
Configuration	Single Quad Drain Triple Source	Pattern Number	Y
Utilized IC / Part	View	Other Specifications	1.1
Printed Circuit Board	8