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CSD16321Q5C

Manufacturer	Texas Instruments Incorporated
Description	Trans MOSFET N-CH 25V 31A 8-Pin SON EP T/R MOSFET N-CH 25V 100A 8SON MOSFET DualCool N-Channel NexFET Power MOSFET MOSFET, N CH, 25V, 31A, 8SON DualCool™ N-Channel NexFET™ Power MOSFET
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Contains lead / RoHS compliant by exemption	SVHC	:No SVHC (20-Jun-2013)
EU RoHS	Compliant	Tariff No	85412900
Part Status	ACTIVE

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	17 ns
Vgs (Max)	10 V	FET Feature	Logic Level Gate
Gate Charge	18 nC	Power - Max	3.1W
Power - Rated	3.1 W	Fall Time (Typ)	17 ns
Rise Time (Typ)	15 ns	Transistor Type	N-Channel
Delay to 1st Tap	27 ns	Vgs(th) (Max) @ Id	1.4V @ 250µA
Voltage - Breakdown	25 V	Voltage - Threshold	:1.1V
Current Rating (Max)	:100A	Resistance - RDS(On)	:1.9mohm
Rds On (Max) @ Id, Vgs	2.4@8V mOhm	Power Dissipation (Max)	:3.1W
Propagation Delay (Max)	15 ns	Vce(on) (Max) @ Vge, Ic	25 V
Logic Voltage - VIL, VIH	Yes	Current Transfer Ratio (Min)	150 S
Gate Charge (Qg) (Max) @ Vgs	19nC @ 4.5V	Current - Peak Pulse (8/20us)	200
Switch Time (Ton, Toff) (Max)	9 ns	Drain to Source Voltage (Vdss)	25V
Current - Peak Pulse (10/1000us)	31 A	Current - Drain (Idss) @ Vds (Vgs=0)	100 A
Input Capacitance (Ciss) (Max) @ Vds	3100pF @ 12.5V	Current - Continuous Drain (Id) @ 25degC	31A (Ta), 100A (Tc)

Temperature - Test

-55 to 150

Operating Temperature

-55 to 150 °C