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STS5PF30L

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET P-CH 30V 5A 8-Pin SO N T/R P-CH 30V 5A 55mOhm SO-8 MOSFET P-CH 30V 5A 8-SOIC STS5PF30L, P-channel MOSFET Transistor 5A 30V, 8-Pin SO MOSFET P-Ch 30 Volt 5 Amp MOSFET,Power;P-Ch;VDSS30V;RDS(ON)0.045Ohm;ID5A;SO-8;PD2.5W;VGS+/-16V;gFS1 STMicroelectronics , P沟道 MOSFET, 5 A, Vds=30 V, 8针 SOIC封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	MOSFET P-Channel, Metal Oxide	Fall Time	35 ns
Vgs (Max)	±16 V	Logic Type	YES
FET Feature	Logic Level Gate	Power - Max	2.5W
Noise Figure	Not Required dB	Power - Rated	2.5 W
Power - Output	Not Required dB	Delay Time - ON	25ns
Frequency - Max	Not Required MHz	Rise Time (Typ)	35 ns
Transistor Type	P-Channel	Delay Time - OFF	125ns
Delay to 1st Tap	125 ns	Voltage - Supply	1.2V
Number of Elements	1	Vgs(th) (Max) @ Id	2.5V @ 250µA
Voltage - Breakdown	30 V	Rds On (Max) @ Id, Vgs	80@10V mOhm
Power Dissipation (Max)	2.5 W	Propagation Delay (Max)	35 ns
Vce(on) (Max) @ Vge, Ic	- 30 V	Current Drain (Id) - Max	5 A
Power (Watts) - Per Port	2.5W	On-State Resistance (Max)	0.08 Ω
Voltage - Supply (Vcc/Vdd)	-30V	Current Transfer Ratio (Max)	10S
Current Transfer Ratio (Min)	13 S	Gate Charge (Qg) (Max) @ Vgs	16nC
Switch Time (Ton, Toff) (Max)	25 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	5 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 16 V	Current - Drain (Idss) @ Vds (Vgs=0)	-5A
Input Capacitance (Ciss) (Max) @ Vds	1350pF @ 25V	Current - Continuous Drain (Id) @ 25degC	5A (Tc)

Type	Power MOSFET	Polarity	P
Matchcode	STS5PF30L	Technology	StripFET
Channel Type	P	Card Standard	Power MOSFET
Configuration	Quad Drain, Single, Triple Source	Standard Leadtime	10 weeks
Printed Circuit Board	8

Operating Temperature	-55 to 150 °C	Thermal Resistance @ GPM	n.s.K/W
Operating Temperature - Junction	+150°C

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