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STS4DPF20L

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STS4DPF20L

Manufacturer
Description
Trans MOSFET P-CH 20V 4A 8-Pin SO N T/R MOSFET P-CH DUAL 20V 4A 8-SOIC STS4DPF20L, Dual N-channel MOSFET Transistor 4A 20V, 8-Pin SO MOSFET P-Ch 20 Volt 4 Amp MOSFET P CH DUAL 20V 4A 8-SOIC STMicroelectronics , 双 P沟道 MOSFET, 4 A, Vds=20 V, 8针 SOIC封装
Category
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Business

Other Names497-8042-1Product CategoryMOSFET
Standard PackageTape & ReelFactory Pack Quantity2500
Standard Package NameSOIC

Compliance

RoHSLead free / RoHS CompliantSVHC:No SVHC (20-Jun-2013)
EU RoHSCompliantTariff No85423300
Rad HardenedNo

Electrical

FET Type2 P-Channel (Dual)Fall Time35 ns
Vgs (Max)±16 VFET FeatureLogic Level Gate
Power - Max2WPower - Rated2 W
Rise Time (Typ)35 nsTransistor TypeN-Channel
Delay to 1st Tap125 nsNumber of Elements2
Vgs(th) (Max) @ Id2.5V @ 250µAVoltage - Breakdown20 V
Voltage - Threshold:1.6VCurrent Rating (Max):4A
Resistance - RDS(On):70mohmContact Voltage (Max):20V
Rds On (Max) @ Id, Vgs80@10V mOhmPower Dissipation (Max)2 W
Propagation Delay (Max)35 nsVce(on) (Max) @ Vge, Ic20 V
On-State Resistance (Max)0.08 ΩGate Charge (Qg) (Max) @ Vgs16nC @ 5V
Switch Time (Ton, Toff) (Max)25 nsDrain to Source Voltage (Vdss)20V
Current - Peak Pulse (10/1000us)4 AVoltage - Gate Trigger (Vgt) (Max)+/- 16 V
Current - Drain (Idss) @ Vds (Vgs=0)4 AInput Capacitance (Ciss) (Max) @ Vds1350pF @ 25V
Current - Continuous Drain (Id) @ 25degC4A

Mechanical

Width4mmHeight1.25mm
Length5mmWeight0.002998 oz
PackagingTape and ReelLead StyleGull-wing
Termination:SMDMounting TypeSurface Mount
Mounting StyleSMD/SMTNumber of Pins:8
Package / Case8SO NPackage CooledSO
Material Finish:MSL 1 - UnlimitedLength - Overall5(Max)
Package QuantitySO NSize / Dimension5 x 4 x 1.25mm
Number of Positions8Shell Size - Insert1.65(Max)
Supplier Device Package8-SO

Product Info

TypePower MOSFETPolarityP
Channel TypePCard StandardPower MOSFET
ConfigurationDual, Dual DrainModule/Board Type:Dual
Printed Circuit Board8

Environmental

Operating Temperature-55 to 150 °C

Documents & Media

PDF Document
PDF Document
PDF Document