点击放大查看

STN1HNK60

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 600V 0.4A 4-Pin(3+Tab) SOT-223 T/R N-CHAN.-FET 0,4A 600V SOT223 MOSFET N-CH 600V 400MA SOT223 STN1HNK60, N-channel MOSFET Transistor 0.4A 600V, 4-Pin SOT-223 MOSFET, N CH, 600V, 400MA, SOT223 MOSFETN0.4A600VSOT223 STMicroelectronics , N沟道 MOSFET, 400 mA, Vds=600 V, 3+Tab针 SOT-223封装 MOSFET 600V 8Ohm 1A N-Chnnl Zener SuperMESH
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

对参数有疑问？问 AI 助手

Business

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±30 V
FET Feature	Logic Level Gate	Power - Max	3.3W
Noise Figure	Not Required dB	Power - Rated	3.3 W
Power - Output	Not Required dB	Fall Time (Typ)	25 ns
Frequency - Max	Not Required MHz	Transistor Type	:N Channel
Delay to 1st Tap	19 ns	Number of Elements	1
Vgs(th) (Max) @ Id	3.7V @ 250µA	Voltage - Breakdown	600 V
Voltage - Threshold	:3V	Current Rating (Max)	:400mA
Resistance - RDS(On)	:8ohm	Contact Voltage (Max)	:600V
Rds On (Max) @ Id, Vgs	8500@10V mOhm	Power Dissipation (Max)	3.3 W
Propagation Delay (Max)	5 ns	Vce(on) (Max) @ Vge, Ic	600 V
Current Drain (Id) - Max	0.4 A	Power (Watts) - Per Port	3.3W
On-State Resistance (Max)	8.5 Ω	Voltage - Supply (Vcc/Vdd)	600V
Gate Charge (Qg) (Max) @ Vgs	10nC @ 10V	Switch Time (Ton, Toff) (Max)	6.5 ns
Vce Saturation (Max) @ Ib, Ic	Not Required %	Drain to Source Voltage (Vdss)	600V
Current - Peak Pulse (10/1000us)	0.4 A	Current - Drain (Idss) @ Vds (Vgs=0)	0.4A
Input Capacitance (Ciss) (Max) @ Vds	156pF @ 25V	Current - Continuous Drain (Id) @ 25degC	400mA (Tc)

Operating Temperature

-55 to 150 °C

PDF Document

PDF Document

PDF Document