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STL26NM60N

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STL26NM60N

Manufacturer
Description
MOSFET N-Ch 600V 0.160 Ohm 19A HV Mdmesh II Trans MOSFET N-CH 600V 19A 4-Pin Power Flat T/R MOSFET 600V 0.1 MOSFET N-CH 600V 19A POWERFLAT MOSFET, N CH, 600V, 19A, POWERFLAT
Category
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Business

MOQ3000Unit Pack3000
Other Names497-11207-2Product CategoryMOSFET
Standard Package3,000

Compliance

RoHSLead free / RoHS CompliantSVHC:No SVHC (20-Jun-2013)
EU RoHSCompliantTariff No85412900

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time50 ns
Vgs (Max):10VFET FeatureStandard
Gate Charge60 nCPower - Max125mW
Power - Rated3 WRise Time (Typ)25 ns
Transistor TypeN-ChannelNumber of Elements1
Vgs(th) (Max) @ Id5V @ 250µAVoltage - Breakdown600
Voltage - Threshold:4VResistance - RDS(On):0.16ohm
Rds On (Max) @ Id, Vgs185 mOhm @ 10A, 10VPower Dissipation (Max):125W
Vce(on) (Max) @ Vge, Ic600 VOn-State Resistance (Max)185@10V
Gate Charge (Qg) (Max) @ Vgs60nC @ 10VDrain to Source Voltage (Vdss)600V
Current - Peak Pulse (10/1000us)19Voltage - Gate Trigger (Vgt) (Max)25 V
Current - Drain (Idss) @ Vds (Vgs=0)19 AInput Capacitance (Ciss) (Max) @ Vds1800pF @ 50V
Current - Continuous Drain (Id) @ 25degC2.7A (Ta), 19A (Tc)

Mechanical

Weight0.03PackagingTape and Reel
Lead StyleNo LeadMounting TypeSurface Mount
Mounting StyleSMD/SMTNumber of Pins:5
Package / Case5-PowerFlat™ HVMaterial Finish:MSL 3 - 168 hours
Package QuantityPower FlatNumber of Positions4
Supplier Device Package5-PowerFlat™ HV (8x8)

Product Info

Channel TypeEnhancement

Environmental

Operating Temperature:150°C