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STD3NK50Z-1

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 500V 2.3A 3-Pin(3+Tab) IPAK Tube MOSFET N-CH 500V 2.3A IPAK MOSFET N-Ch, 500V-3ohms Zener SuperMESH 2.3A MOSFET, N CH, 500V, 2.3A, IPAK
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Product Category	MOSFET	Standard Package	Rail / Tube
Standard Package Name	IPAK

RoHS	Lead free / RoHS Compliant	SVHC	:No SVHC (20-Jun-2013)
EU RoHS	Compliant	Tariff No	85423300

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	14 ns
Vgs (Max)	±30 V	FET Feature	Standard
Power - Max	45W	Power - Rated	45 W
Fall Time (Typ)	14 ns	Rise Time (Typ)	13 ns
Transistor Type	N-Channel	Delay to 1st Tap	24 ns
Number of Elements	1	Vgs(th) (Max) @ Id	4.5V @ 50µA
Voltage - Breakdown	500 V	Voltage - Threshold	:3.75V
Current Rating (Max)	:2.3A	Resistance - RDS(On)	:2.8ohm
Contact Voltage (Max)	:500V	Rds On (Max) @ Id, Vgs	3300@10V mOhm
Power Dissipation (Max)	:45W	Propagation Delay (Max)	13 ns
Vce(on) (Max) @ Vge, Ic	500 V	On-State Resistance (Max)	3300@10V
Gate Charge (Qg) (Max) @ Vgs	15nC @ 10V	Switch Time (Ton, Toff) (Max)	8 ns
Drain to Source Voltage (Vdss)	500V	Current - Peak Pulse (10/1000us)	2.3 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 30 V	Current - Drain (Idss) @ Vds (Vgs=0)	2.3 A
Input Capacitance (Ciss) (Max) @ Vds	280pF @ 25V	Current - Continuous Drain (Id) @ 25degC	2.3A (Tc)

Channel Type

Enhancement

Configuration

Single

Operating Temperature

-55 to 150 °C