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STD35NF06LT4

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 60V 35A 3-Pin(2+Tab) TO-252 T/R N-CH 60V 35A 17mOhm TO252-3 MOSFET N-CH 60V 35A DPAK STD35NF06LT4, N-channel MOSFET Transistor 35A 60V, 3-Pin TO-252 MOSFET N-Ch 60 Volt 35 Amp MOSFET, N CH, 60V, 35A, DPAK MOSFETN35A60VTO252 STMicroelectronics , N沟道 MOSFET, 35 A, Vds=60 V, 3针 TO-252封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	20 ns
Vgs (Max)	±15 V	Logic Type	YES
FET Feature	Logic Level Gate	Power - Max	80W
Noise Figure	Not Required dB	Power - Rated	80 W
Power - Output	Not Required dB	Frequency - Max	Not Required MHz
Rise Time (Typ)	100 ns	Transistor Type	N-Channel
Delay to 1st Tap	40 ns	Number of Elements	1
Vgs(th) (Max) @ Id	1V @ 250µA	Voltage - Breakdown	60 V
Voltage - Threshold	:1V	Current Rating (Max)	:35A
Resistance - RDS(On)	:14mohm	Contact Voltage (Max)	:60V
Rds On (Max) @ Id, Vgs	17@10V mOhm	Power Dissipation (Max)	80 W
Propagation Delay (Max)	100 ns	Vce(on) (Max) @ Vge, Ic	60 V
Current Drain (Id) - Max	35 A	Power (Watts) - Per Port	80W
On-State Resistance (Max)	0.017 Ω	Voltage - Supply (Vcc/Vdd)	60V
Current Transfer Ratio (Min)	28 S	Gate Charge (Qg) (Max) @ Vgs	33nC
Switch Time (Ton, Toff) (Max)	20 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	60V	Current - Peak Pulse (10/1000us)	35 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 16 V	Current - Drain (Idss) @ Vds (Vgs=0)	35A
Input Capacitance (Ciss) (Max) @ Vds	1700pF @ 25V	Current - Continuous Drain (Id) @ 25degC	35A (Tc)

Operating Temperature

-55 to 175 °C

Thermal Resistance @ GPM

1.88K/W

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