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STD12NF06L-1

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 60V 12A 3-Pin(3+Tab) IPAK Tube MOSFET N-CH 60V 12A IPAK MOSFET N-Ch 60 Volt 12 Amp
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Product Category	MOSFET	Standard Package	Rail / Tube
Factory Pack Quantity	75	Standard Package Name	IPAK

RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Rad Hardened	No

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	13 ns
Vgs (Max)	±16 V	FET Feature	Logic Level Gate
Power - Max	30W	Power - Rated	30 W
Fall Time (Typ)	13 ns	Rise Time (Typ)	35 ns
Transistor Type	N-Channel	Delay to 1st Tap	20 ns
Number of Channels	1 Channel	Number of Elements	1
Vgs(th) (Max) @ Id	2V @ 250µA	Voltage - Breakdown	60 V
Rds On (Max) @ Id, Vgs	100@10V mOhm	Power - Average Forward	30 W
Power Dissipation (Max)	30000	Propagation Delay (Max)	35 ns
Vce(on) (Max) @ Vge, Ic	60 V	On-State Resistance (Max)	0.1 ohm
Current Transfer Ratio (Min)	7 S	Gate Charge (Qg) (Max) @ Vgs	10nC @ 5V
Switch Time (Ton, Toff) (Max)	10 ns	Drain to Source Voltage (Vdss)	60V
Current - Peak Pulse (10/1000us)	12 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 16 V
Current - Drain (Idss) @ Vds (Vgs=0)	12 A	Input Capacitance (Ciss) (Max) @ Vds	350pF @ 25V
Current - Continuous Drain (Id) @ 25degC	12A (Tc)

Operating Temperature

-55 to 175 °C

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