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STB80NF03L-04T4

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 30V 80A 3-Pin(2+Tab) D2PAK T/R MOSFET N-CH 30V 80A D2PAK MOSFET N-Ch 30 Volt 80 Amp
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS	Lead free / RoHS Compliant	EU RoHS	Compliant
Rad Hardened	No

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	95 ns
Vgs (Max)	±20 V	FET Feature	Logic Level Gate
Power - Max	300W	Noise Figure	Not Required dB
Power - Rated	300 W	Power - Output	Not Required dB
Fall Time (Typ)	95 ns	Frequency - Max	Not Required MHz
Rise Time (Typ)	270 ns	Transistor Type	N-Channel
Delay to 1st Tap	110 ns	Number of Channels	1 Channel
Number of Elements	1	Vgs(th) (Max) @ Id	1V @ 250µA
Voltage - Breakdown	30 V	Rds On (Max) @ Id, Vgs	4@10V mOhm
Power - Average Forward	300 W	Power Dissipation (Max)	300000
Propagation Delay (Max)	270 ns	Vce(on) (Max) @ Vge, Ic	30 V
Current Drain (Id) - Max	80 A	On-State Resistance (Max)	0.004 ohm
Current Transfer Ratio (Min)	50 S	Gate Charge (Qg) (Max) @ Vgs	110nC @ 4.5V
Switch Time (Ton, Toff) (Max)	30 ns	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	80 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	80 A
Input Capacitance (Ciss) (Max) @ Vds	5500pF @ 25V	Current - Continuous Drain (Id) @ 25degC	80A (Tc)

Operating Temperature

-65 to 175 °C

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PDF Document

PDF Document