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STB12NK80ZT4

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RoHS	Lead free / RoHS Compliant	SVHC	:No SVHC (20-Jun-2013)
EU RoHS	Compliant	Tariff No	85423300

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	20 ns
Vgs (Max)	:10V	FET Feature	Standard
Gate Charge	87 nC	Power - Max	190W
Power - Rated	190 W	Rise Time (Typ)	18 ns
Transistor Type	N-Channel	Delay to 1st Tap	70 ns
Number of Elements	1	Vgs(th) (Max) @ Id	4.5V @ 100µA
Voltage - Breakdown	800	Voltage - Threshold	:3.75V
Current Rating (Max)	:10.5A	Resistance - RDS(On)	:650mohm
Contact Voltage (Max)	:800V	Rds On (Max) @ Id, Vgs	750 mOhm @ 5.25A, 10V
Power Dissipation (Max)	:190W	Vce(on) (Max) @ Vge, Ic	800 V
On-State Resistance (Max)	750@10V	Current Transfer Ratio (Min)	12 S
Gate Charge (Qg) (Max) @ Vgs	87nC @ 10V	Drain to Source Voltage (Vdss)	800V
Current - Peak Pulse (10/1000us)	10.5	Voltage - Gate Trigger (Vgt) (Max)	+/- 30 V
Current - Drain (Idss) @ Vds (Vgs=0)	10.5 A	Input Capacitance (Ciss) (Max) @ Vds	2620pF @ 25V
Current - Continuous Drain (Id) @ 25degC	10.5A (Tc)