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STB11NM60-1
| Manufacturer | |
| Description | Trans MOSFET N-CH 600V 11A 3-Pin(3+Tab) I2PAK Tube MOSFET N-CH 650V 11A I2PAK MOSFET N-Ch 600 Volt 11 Amp |
| Category |
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Business
| Product Category | MOSFET | Standard Package | Rail / Tube |
| Factory Pack Quantity | 50 | Standard Package Name | I2PAK |
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 11 ns |
| Vgs (Max) | ±30 V | FET Feature | Standard |
| Power - Max | 160W | Power - Rated | 160 W |
| Fall Time (Typ) | 11 ns | Rise Time (Typ) | 20 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 6 ns |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 5V @ 250µA |
| Voltage - Breakdown | 600 V | Rds On (Max) @ Id, Vgs | 450@10V mOhm |
| Power Dissipation (Max) | 160000 | Vce(on) (Max) @ Vge, Ic | 600 V |
| On-State Resistance (Max) | 450@10V | Current Transfer Ratio (Min) | 5.2 S |
| Gate Charge (Qg) (Max) @ Vgs | 30nC @ 10V | Switch Time (Ton, Toff) (Max) | 20 ns |
| Drain to Source Voltage (Vdss) | 650V | Current - Peak Pulse (10/1000us) | 11 A |
| Voltage - Gate Trigger (Vgt) (Max) | +/- 30 V | Current - Drain (Idss) @ Vds (Vgs=0) | 11 A |
| Input Capacitance (Ciss) (Max) @ Vds | 1000pF @ 25V | Current - Continuous Drain (Id) @ 25degC | 11A (Tc) |
Mechanical
| Weight | 0.050717 oz | Packaging | Tube |
| Lead Style | Through Hole | Mounting Type | Through Hole |
| Mounting Style | SMD/SMT | Package / Case | 3I2PAK |
| Package Quantity | I2PAK | Number of Positions | 3 |
| Supplier Device Package | I2PAK | ||
Product Info
| Channel Type | Enhancement | Configuration | Single |
Environmental
| Operating Temperature | -65 to 150 °C | ||
Documents & Media
PDF Document
PDF Document
PDF Document