点击放大查看

STB11NK50ZT4

Manufacturer	STMicroelectronics N.V.
Description	Trans MOSFET N-CH 500V 10A 3-Pin(2+Tab) D2PAK T/R N-CH 500V 10A 520mOhm TO263-3 MOSFET N-CH 500V 10A D2PAK MOSFET N-Ch 500 Volt 10 Amp Zener SuperMESH MOSFET, N CH, 500V, 10A, D2PAK
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

对参数有疑问？问 AI 助手

Business

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	15 ns
Vgs (Max)	±30 V	Logic Type	NO
FET Feature	Standard	Gate Charge	49 nC
Power - Max	125W	Power - Rated	125 W
Fall Time (Typ)	15 ns	Rise Time (Typ)	18 ns
Transistor Type	N-Channel	Delay to 1st Tap	41 ns
Number of Elements	1	Vgs(th) (Max) @ Id	4.5V @ 100µA
Voltage - Breakdown	500 V	Voltage - Threshold	:3.75V
Current Rating (Max)	:10A	Resistance - RDS(On)	:480mohm
Contact Voltage (Max)	:500V	Rds On (Max) @ Id, Vgs	520@10V mOhm
Power Dissipation (Max)	:125W	Propagation Delay (Max)	18 ns
Vce(on) (Max) @ Vge, Ic	500 V	Power (Watts) - Per Port	125W
On-State Resistance (Max)	520@10V	Voltage - Supply (Vcc/Vdd)	500V
Current Transfer Ratio (Min)	77 S	Gate Charge (Qg) (Max) @ Vgs	68nC
Switch Time (Ton, Toff) (Max)	14.5 ns	Drain to Source Voltage (Vdss)	500V
Current - Peak Pulse (10/1000us)	10 A	Voltage - Gate Trigger (Vgt) (Max)	+/- 30 V
Current - Drain (Idss) @ Vds (Vgs=0)	10A	Input Capacitance (Ciss) (Max) @ Vds	1390pF @ 25V
Current - Continuous Drain (Id) @ 25degC	10A (Tc)