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PD410PI2E00F
| Manufacturer | |
| Description | Photodiode Chip 1000nm 1A/W Sensitivity 2-Pin Sharp PD410PI2E00F Infrared Photodiode, Through-hole Sharp 红外 光电二极管, 通孔安装 |
| Category |
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Compliance
| RoHS | Compliant | EU RoHS | Compliant |
| Rad Hardened | No | ||
Electrical
| Fall Time | 200 ns | Wavelength | 1000nm |
| Sensitivity | 1A/W | Power - Rated | 0.15 W |
| Spectral Range | Infrared | Rise Time (Typ) | 200 ns |
| Responsivity @ nm | 1 A/W | Wavelength - Peak | 1000nm |
| Sensitivity (mV/g) | 1A/W | Voltage - Breakdown | 32 V |
| Current - Dark (Max) | 10 | Current - Dark (Typ) | 10 nA |
| Power Dissipation (Max) | 150 | Current - Dark (Id) (Max) | 10 nA |
| Voltage Regulation - Load | 32 | Max Propagation Delay @ V, Max CL | 200(Typ) |
Mechanical
| Width | 3.75mm | Height | 5mm |
| Length | 4mm | Mounting Type | Through Hole |
| Number of Pins | 2 | Length - Overall | 4 |
| Size / Dimension | 4 x 3.75 x 5mm | Number of Contacts | 2 |
| Number of Positions | 2 | Shell Size - Insert | 5 |
Product Info
| Type | Chip | Polarity | Forward |
| Lens Type | Black Epoxy | Printed Circuit Board | 2 |
Environmental
| Operating Temperature | -25C to 85C | ||