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SKM200GB12E4
| Manufacturer | |
| Description | SKM200GB12E4, IGBT Halfbridge Module, N-channel, Dual, Emitter-Collector, 314A 1200V, 7-Pin D 56 IGBT;D-56;IGBT;1200V;310A;1200V;20V;5.5V(Typ.) IGBT module SEMITRANS 3 1200 V, SKM200GB12E4, Semikron Semikron N通道 IGBT 模块, 双半桥, 314 A 1200 V, 7针 SEMITRANS3封装 |
| Category |
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Compliance
| RoHS | RoHS Compliant Part | ||
Electrical
| Vgs (Max) | ±20V | Power - Max | 33mJ |
| Transistor Type | IGBT | Switching Energy | 18mJ |
| Voltage - Supply | 1200V | Resistance @ 25degC | 0.095K/W |
| Voltage - Threshold | 5.5V | Voltage - Input (Min) | 1200 V |
| Rise / Fall Time (Typ) | 55ns | Power Dissipation (Max) | 21 |
| Vce(on) (Max) @ Vge, Ic | 1200 V | Turn On / Turn Off Time (Typ) | 20 |
| Vce Saturation (Max) @ Ib, Ic | 1.9V | Current - Collector (Ic) (Max) | 300A |
| Current - Collector Cutoff (Max) | 314 A | Voltage - Gate Trigger (Vgt) (Max) | ±20V |
Mechanical
| Width | 61.4mm | Height | 30mm |
| Length | 106.4mm | Mounting Type | Screw |
| Number of Pins | 7 | Package / Case | D56 |
| Package Cooled | D 56 | Package Quantity | SEMITRANS3 |
| Primary Material | Si | Size / Dimension | 106.4 x 61.4 x 30mm |
| Number of Positions | 7 | ||
Product Info
| Mfr | 斯洛伐克 | Type | SPT |
| Polarity | N-Channel | Channel Type | N |
| Configuration | Dual, Emitter-Collector | Channels per IC | 双半桥 |
| Capacity (Pounds) | 0.28 千克 | Connection Method | 3 x M5 |
| Other Specifications | 13nF | ||
Environmental
| Operating Temperature | +175 °C | ||