5HN01M-TL-E-SA

Manufacturer	SANYO Electric Co., Ltd.
Description	MOSFET N-CH 50V 100MA MCP
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Compliance

Part Status

Obsolete

Qualification

FET Type	N-Channel	Vgs (Max)	±20V
FET Feature	-	Vgs(th) (Max) @ Id	2.4V @ 100µA
Rds On (Max) @ Id, Vgs	7.5Ohm @ 50mA, 10V	Power Dissipation (Max)	150mW (Ta)
Gate Charge (Qg) (Max) @ Vgs	1.4 nC @ 10 V	Drain to Source Voltage (Vdss)	50 V
Input Capacitance (Ciss) (Max) @ Vds	6200 pF @ 10 V	Current - Continuous Drain (Id) @ 25degC	100mA (Ta)

Packaging	Bulk	Mounting Type	Surface Mount
Package / Case	SC-70, SOT-323	Supplier Device Package	MCP

Mfr	Sanyo	Grade	-
Series	-	Technology	MOSFET (Metal Oxide)

Operating Temperature

150°C

PDF Document

PDF Document