| FET Type | 2 P-Channel (Dual) | Fall Time | 180 ns |
| Vgs (Max) | 1V @ 1mA | FET Feature | Logic Level Gate, 1.5V Drive |
| Gate Charge | 20 nC | Power - Max | 550W |
| Rise Time (Typ) | 60 ns | Transistor Type | P-Channel |
| Delay to 1st Tap | 300 ns | Number of Channels | 2 Channel |
| Vgs(th) (Max) @ Id | 1V @ 1mA | Diode Configuration | NO |
| Rds On (Max) @ Id, Vgs | 36 mOhm @ 4A, 4.5V | Power - Average Forward | 1.5 W |
| Vce(on) (Max) @ Vge, Ic | - 12 V | Logic Voltage - VIL, VIH | NO |
| Power (Watts) - Per Port | 1.5 W | On-State Resistance (Max) | 26 mOhms |
| Idle Current, Typ @ 25degC | -4 A | Voltage - Supply (Vcc/Vdd) | -12 V |
| Current Transfer Ratio (Min) | 5.5 S | Gate Charge (Qg) (Max) @ Vgs | 20nC @ 4.5V |
| Drain to Source Voltage (Vdss) | 12V | Input Capacitance (Ciss) (Max) @ Vds | 1940pF @ 6V |
| Current - Continuous Drain (Id) @ 25degC | 4A | |
