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US5U3TR

Manufacturer	ROHM Co., Ltd.
Description	Trans MOSFET N-CH 30V 1.5A 5-Pin TUMT T/R Transistor MOSFET N-CH 30V 1.5A TUMT5 MOSFET 2.5V Drive N-Chan + Sch Barrier Diode
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS

Lead free / RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	6 ns
Vgs (Max)	12 V	FET Feature	Diode (Isolated)
Power - Max	700mW	Power - Rated	1 W
Fall Time (Typ)	6 ns	Rise Time (Typ)	9 ns
Transistor Type	N-Channel	Delay to 1st Tap	15 ns
Number of Channels	1 Channel	Vgs(th) (Max) @ Id	1.5V @ 1mA
Voltage - Breakdown	30 V	Rds On (Max) @ Id, Vgs	240@4.5V mOhm
Power - Average Forward	1 W	Propagation Delay (Max)	9 ns
Vce(on) (Max) @ Vge, Ic	30 V	On-State Resistance (Max)	240 mOhms
Gate Charge (Qg) (Max) @ Vgs	2.2nC @ 4.5V	Switch Time (Ton, Toff) (Max)	7 ns
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	1.5 A
Voltage - Gate Trigger (Vgt) (Max)	12 V	Current - Drain (Idss) @ Vds (Vgs=0)	1.5 A
Input Capacitance (Ciss) (Max) @ Vds	80pF @ 10V	Current - Continuous Drain (Id) @ 25degC	1.5A (Ta)