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SP8K1FU6TB

Manufacturer	ROHM Co., Ltd.
Description	MOSFET 30V 5A N-CHAN DUAL Transistor MOSFET N-CH DUAL 30V 5A 8SOIC
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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RoHS

RoHS Compliant

FET Type	2 N-Channel (Dual)	Fall Time	5 ns
Vgs (Max)	20 V	FET Feature	Logic Level Gate
Power - Max	2W	Power - Rated	2 W
Rise Time (Typ)	8 ns	Transistor Type	N-Channel
Delay to 1st Tap	22 ns	Number of Channels	2 Channel
Vgs(th) (Max) @ Id	2.5V @ 1mA	Rds On (Max) @ Id, Vgs	0.051 Ohms
Power - Average Forward	2 W	Vce(on) (Max) @ Vge, Ic	30 V
On-State Resistance (Max)	51 mOhms	Gate Charge (Qg) (Max) @ Vgs	5.5nC @ 5V
Switch Time (Ton, Toff) (Max)	6 ns	Drain to Source Voltage (Vdss)	30V
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	5 A
Input Capacitance (Ciss) (Max) @ Vds	230pF @ 10V	Current - Continuous Drain (Id) @ 25degC	5A

Technology	Si	Channel Type	Enhancement
Manufacturer	ROHM Semiconductor	Configuration	Dual Dual Drain

Operating Temperature

+ 150 C

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