点击放大查看

RTF025N03TL

Manufacturer	ROHM Co., Ltd.
Description	MOSFET N-CH 30V 1.4A TUMT3 Transistor MOSFET N-CH 30V 2.5A TUMT3 Trans MOSFET N-CH 30V 2.5A 3-Pin TUMT T/R
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

对参数有疑问？问 AI 助手

Business

RoHS

RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	15 ns
Vgs (Max)	12 V	FET Feature	Standard
Power - Max	800mW	Power - Rated	0.8 W
Rise Time (Typ)	15 ns	Transistor Type	N-Channel
Delay to 1st Tap	27 ns	Number of Channels	1 Channel
Vgs(th) (Max) @ Id	1.5V @ 1mA	Rds On (Max) @ Id, Vgs	0.7 Ohms
Power - Average Forward	800 mW	Vce(on) (Max) @ Vge, Ic	30 V
On-State Resistance (Max)	48 mOhms	Gate Charge (Qg) (Max) @ Vgs	5.2nC @ 4.5V
Switch Time (Ton, Toff) (Max)	8 ns	Drain to Source Voltage (Vdss)	30V
Voltage - Gate Trigger (Vgt) (Max)	12 V	Current - Drain (Idss) @ Vds (Vgs=0)	2.5 A
Input Capacitance (Ciss) (Max) @ Vds	270pF @ 10V	Current - Continuous Drain (Id) @ 25degC	2.5A (Ta)