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RSS130N03FU6TB

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RSS130N03FU6TB

Manufacturer
Description
MOSFET 30V 13A N CHANNEL Transistor MOSFET N-CH 30V 13A 8SOIC MOSFET, N, 30V, 13A
Category
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Business

MOQ2500Unit Pack2500
Product CategoryMOSFETStandard Package2,500
Factory Pack Quantity2500

Compliance

RoHSLead free / RoHS CompliantTariff No85412900

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time55 ns
Vgs (Max):10VFET FeatureLogic Level Gate
Power - Max2WPower - Rated2 W
Rise Time (Typ)30 nsTransistor TypeN-Channel
Delay to 1st Tap88 nsVgs(th) (Max) @ Id2.5V @ 1mA
Voltage - Threshold:2.5VResistance - RDS(On):11.1mohm
Contact Voltage (Max):30VRds On (Max) @ Id, Vgs8.1 mOhm @ 13A, 10V
Power Dissipation (Max):2WVce(on) (Max) @ Vge, Ic30 V
Capacitance Ratio Condition:2000pFGate Charge (Qg) (Max) @ Vgs35nC @ 5V
Current - Peak Pulse (8/20us):52ASwitch Time (Ton, Toff) (Max):55ns
Drain to Source Voltage (Vdss)30VVoltage - Gate Trigger (Vgt) (Max)+/- 20 V
Current - Drain (Idss) @ Vds (Vgs=0)13 AInput Capacitance (Ciss) (Max) @ Vds2000pF @ 10V
Current - Continuous Drain (Id) @ 25degC13A (Ta)

Mechanical

Weight0.000084PackagingTape & Reel (TR)
Termination:SMDMounting TypeSurface Mount
Mounting StyleSMD/SMTNumber of Pins:8
Package / Case8-SOIC (0.154", 3.90mm Width)Material Finish:MSL 1 - Unlimited
Pin Hole Diameter:S(1+2+3),D(5+6+7+8),G(4)Supplier Device Package8-SOP

Product Info

ConfigurationSingle Quad Drain Triple Source

Environmental

Operating Temperature- 55 C

Documents & Media

PDF Document
PDF Document