| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 13 ns |
| Vgs (Max) | ±20 V | FET Feature | Logic Level Gate, 4V Drive |
| Gate Charge | 6.5 nC | Power - Max | 1W |
| Power - Rated | 1 W | Fall Time (Typ) | 13 ns |
| Rise Time (Typ) | 8 ns | Transistor Type | P-Channel |
| Delay to 1st Tap | 40 ns | Number of Channels | 1 Channel |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Voltage - Breakdown | 30 V | Rds On (Max) @ Id, Vgs | 160@10V mOhm |
| Power - Average Forward | 1 W | Propagation Delay (Max) | 8 ns |
| Vce(on) (Max) @ Vge, Ic | 30 V | On-State Resistance (Max) | 115 mOhms |
| Current Transfer Ratio (Min) | 1.2 S | Gate Charge (Qg) (Max) @ Vgs | 6.5nC @ 10V |
| Switch Time (Ton, Toff) (Max) | 12 ns | Drain to Source Voltage (Vdss) | 30V |
| Current - Peak Pulse (10/1000us) | 1.5 A | Current - Drain (Idss) @ Vds (Vgs=0) | 1.5 A |
| Input Capacitance (Ciss) (Max) @ Vds | 230pF @ 10V | Current - Continuous Drain (Id) @ 25degC | 1.5A (Ta) |
