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RQ1A060ZPTR

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RQ1A060ZPTR

Manufacturer
Description
MOSFET P-CH 12V 6A TSMT8 MOSFET SW MOSFET MID PWR P-CH 12V -6A P-CH+ESD -12V -6A 23mOhm TSMT8
Category
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Business

Other NamesRQ1A060ZPTRCTStandard Package3,000
Factory Pack Quantity3000

Compliance

RoHSLead free / RoHS CompliantAutomotiveNO
Leadfree DefinRoHS-conform

Electrical

FET TypeMOSFET P-Channel, Metal OxideFall Time230 ns
Vgs (Max)1V @ 1mAFET FeatureLogic Level Gate, 1.5V Drive
Gate Charge34 nCPower - Max1.5W
Rise Time (Typ)105 nsTransistor TypeP-Channel
Delay to 1st Tap400 nsNumber of Channels1 Channel
Vgs(th) (Max) @ Id1V @ 1mADiode ConfigurationNO
Rds On (Max) @ Id, Vgs23 mOhm @ 6A, 4.5VPower - Average Forward1.5 W
Vce(on) (Max) @ Vge, Ic- 12 VLogic Voltage - VIL, VIHYES
Power (Watts) - Per Port1.5 WOn-State Resistance (Max)16 mOhms
Idle Current, Typ @ 25degC-6 AVoltage - Supply (Vcc/Vdd)-12 V
Current Transfer Ratio (Min)7.5 SGate Charge (Qg) (Max) @ Vgs34nC @ 4.5V
Drain to Source Voltage (Vdss)12VInput Capacitance (Ciss) (Max) @ Vds2800pF @ 6V
Current - Continuous Drain (Id) @ 25degC6A

Mechanical

PackagingTape & Reel (TR)Mounting TypeSurface Mount
Mounting StyleSMD/SMTPackage / Case8-SMD, Flat Lead
Supplier Device PackageTSMT8

Product Info

TechnologySiChannel TypeEnhancement
ManufacturerROHM SemiconductorConfigurationSingle

Environmental

Operating Temperature+ 150 C

Documents & Media

PDF Document