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RDN050N20FU6

Manufacturer	ROHM Co., Ltd.
Description	MOSFET PWR MOSFET TR DRIVE VLT-10V Transistor MOSFET N-CH 200V 5A TO-220FN
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Business

MOQ	500	Unit Pack	500
Standard Package	500	Factory Pack Quantity	500

RoHS

RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	10 V
FET Feature	Standard	Gate Charge	9.3 nC
Power - Max	30W	Power - Rated	30 W
Transistor Type	1 N-Channel	Number of Channels	1 Channel
Vgs(th) (Max) @ Id	4V @ 1mA	Rds On (Max) @ Id, Vgs	0.55 Ohms
Power - Average Forward	30 W	Vce(on) (Max) @ Vge, Ic	200 V
On-State Resistance (Max)	720 mOhms	Gate Charge (Qg) (Max) @ Vgs	18.6nC @ 10V
Drain to Source Voltage (Vdss)	200V	Current - Drain (Idss) @ Vds (Vgs=0)	8 A
Input Capacitance (Ciss) (Max) @ Vds	292pF @ 10V	Current - Continuous Drain (Id) @ 25degC	5A (Ta)

Technology

Manufacturer

ROHM Semiconductor

Mechanical Life

NRND: Not recommended for new designs.

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