RD3G01BATTL1
| Manufacturer | |
| Description | PCH -40V -15A POWER MOSFET - RD3 |
| Category |
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Compliance
| Part Status | Active | Qualification | - |
Electrical
| FET Type | P-Channel | Vgs (Max) | ±20V |
| FET Feature | - | Vgs(th) (Max) @ Id | 2.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 39mOhm @ 15A, 10V | Power Dissipation (Max) | 25W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 19.3 nC @ 10 V | Drain to Source Voltage (Vdss) | 40 V |
| Input Capacitance (Ciss) (Max) @ Vds | 1030 pF @ 20 V | Drive Voltage (Max Rds On, Min Rds On) | 4.5V, 10V |
| Current - Continuous Drain (Id) @ 25degC | 15A (Tc) | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Supplier Device Package | TO-252 |
Product Info
| Mfr | Rohm Semiconductor | Grade | - |
| Series | - | Technology | MOSFET (Metal Oxide) |
| Base Product Number | RD3G01 | ||
Environmental
| Operating Temperature | 150°C (TJ) | ||
Documents & Media
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Online Document