R6511END3TL1
| Manufacturer | |
| Description | 650V 11A TO-252, LOW-NOISE POWER |
| Category |
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Compliance
| Part Status | Active | Qualification | - |
Electrical
| FET Type | N-Channel | Vgs (Max) | ±20V |
| FET Feature | - | Vgs(th) (Max) @ Id | 4V @ 320µA |
| Rds On (Max) @ Id, Vgs | 400mOhm @ 3.8A, 10V | Power Dissipation (Max) | 124W (Tc) |
| Gate Charge (Qg) (Max) @ Vgs | 32 nC @ 10 V | Drain to Source Voltage (Vdss) | 650 V |
| Input Capacitance (Ciss) (Max) @ Vds | 670 pF @ 25 V | Drive Voltage (Max Rds On, Min Rds On) | 10V |
| Current - Continuous Drain (Id) @ 25degC | 11A (Tc) | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | TO-252-3, DPAK (2 Leads + Tab), SC-63 | Supplier Device Package | TO-252 |
Product Info
| Mfr | Rohm Semiconductor | Grade | - |
| Series | - | Technology | MOSFET (Metal Oxide) |
| Base Product Number | R6511 | ||
Environmental
| Operating Temperature | 150°C (TJ) | ||