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QS5U28TR
| Manufacturer | |
| Description | MOSFET P-CH 20V 2A Transistor MOSFET P-CH 20V 2A TSMT5 ROHM Si P沟道 MOSFET + 二极管 , 2 A, Vds=20 V, 5针 TSMT封装 |
| Category |
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Business
| MOQ | 3000 | Product | MOSFET Small Signal |
| Unit Pack | 3000 | Other Names | QS5U28CT |
| Product Category | MOSFET | Standard Package | 3,000 |
| Factory Pack Quantity | 3000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 16 ns |
| Vgs (Max) | 2V @ 1mA | FET Feature | Diode (Isolated) |
| Power - Max | 900mW | Power - Rated | 1.25 W |
| Delay Time - ON | 10 ns | Output Function | 增强 |
| Rise Time (Typ) | 16 ns | Transistor Type | P-Channel |
| Delay Time - OFF | 32 ns | Delay to 1st Tap | 32 ns |
| Voltage - Supply | 20 V | Number of Channels | 1 Channel |
| Number of Elements | 1 | Resistance - Input | 245 mΩ |
| Vgs(th) (Max) @ Id | 2V @ 1mA | Rds On (Max) @ Id, Vgs | 125 mOhms at 4.5 V |
| Power - Average Forward | 1.25 W | Power Dissipation (Max) | 0.9 W |
| Vce(on) (Max) @ Vge, Ic | - 20 V | On-State Resistance (Max) | 125 mOhms |
| Gate Charge (Qg) (Max) @ Vgs | 4.8nC @ 4.5V | Switch Time (Ton, Toff) (Max) | 10 ns |
| Drain to Source Voltage (Vdss) | 20V | Voltage - Gate Trigger (Vgt) (Max) | +/- 12 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | - 2 A | Input Capacitance (Ciss) (Max) @ Vds | 450pF @ 10V |
| Current - Continuous Drain (Id) @ 25degC | 2A (Ta) | ||
Mechanical
| Width | 1.6mm | Height | 0.85mm |
| Length | 2.9mm | Packaging | Reel |
| Mounting Type | Surface Mount | Mounting Style | SMD/SMT |
| Number of Pins | 5 | Package / Case | TSMT-5 |
| Package Quantity | TSMT | Size / Dimension | 2.9 x 1.6 x 0.85mm |
| Supplier Device Package | TSMT5 | ||
Product Info
| Series | QS5U28 | Function | Y |
| Technology | Si | Channel Type | P |
| Manufacturer | ROHM Semiconductor | Configuration | Single |
Environmental
| Operating Temperature | + 150 C | ||
Documents & Media
PDF Document
