BSS84XHZGG2CR
| Manufacturer | |
| Description | MOSFET P-CH 60V 230MA DFN1010-3W |
| Category |
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Compliance
| Part Status | Active | Qualification | AEC-Q101 |
Electrical
| FET Type | P-Channel | Vgs (Max) | ±20V |
| FET Feature | - | Vgs(th) (Max) @ Id | 2.5V @ 100µA |
| Rds On (Max) @ Id, Vgs | 5.3Ohm @ 230mA, 10V | Power Dissipation (Max) | 1W (Ta) |
| Drain to Source Voltage (Vdss) | 60 V | Input Capacitance (Ciss) (Max) @ Vds | 34 pF @ 30 V |
| Current - Continuous Drain (Id) @ 25degC | 230mA (Ta) | ||
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | 3-XFDFN | Supplier Device Package | DFN1010-3W |
Product Info
| Mfr | Rohm Semiconductor | Grade | Automotive |
| Series | - | Technology | MOSFET (Metal Oxide) |
| Base Product Number | BSS84 | ||
Environmental
| Operating Temperature | 150°C (TJ) | ||
Documents & Media
Online Document
Online Document
Online Document
Online Document