BSM180D12P3C007
| Manufacturer | |
| Description | Discrete Semiconductor Modules Half Bridge Module SiC UMOSFET & SBD |
| Category |
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Business
| Product | Power Semiconductor Modules | Factory Pack Quantity | 12 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Fall Time | 50 ns | Vgs (Max) | - 4 V, + 22 V |
| Rise Time (Typ) | 70 ns | Delay to 1st Tap | 165 ns |
| Power - Average Forward | 880 W | Vce(on) (Max) @ Vge, Ic | 1200 V |
| Switch Time (Ton, Toff) (Max) | 50 ns | Current - Continuous Drain (Id) @ 25degC | 180 A |
Mechanical
| Packaging | Tray | Mounting Style | Screw |
| Package / Case | Module | ||
Product Info
| Type | SiC Power Module | Manufacturer | ROHM Semiconductor |
| Configuration | Half-Bridge | ||
Environmental
| Operating Temperature | + 150 C | ||