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BSM180D12P2C101

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BSM180D12P2C101

Manufacturer
Description
SIC PWR MOD DMOS HALF BRIDGE MODULE, POWER, SIC, 1200V, 180A Discrete Semiconductor Modules Mod: 1200V 180A (no Diode) SiC Power Module 180A 1200V
Category
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Business

Standard Package1

Compliance

Tariff No85359000

Electrical

FET Type2 N-Channel (Half Bridge)FET FeatureSilicon Carbide (SiC)
Power - Max1130WTransistor Type:N Channel
Vgs(th) (Max) @ Id4V @ 35.2mAVoltage - Threshold:2.7V
Power Dissipation (Max):1.13kWDrain to Source Voltage (Vdss)1200V (1.2kV)
Input Capacitance (Ciss) (Max) @ Vds23000pF @ 10VCurrent - Continuous Drain (Id) @ 25degC180A

Mechanical

Weight0.05PackagingBulk
Mounting Type*Number of Pins:10
Package / CaseModuleMaterial Finish:MSL 1 - Unlimited
Supplier Device PackageModule

Product Info

Series*

Environmental

Operating Temperature:-40°C

Documents & Media

PDF Document