点击放大查看

2SK3018T106

Manufacturer	ROHM Co., Ltd.
Description	Trans MOSFET N-CH 30V 0.1A 3-Pin UMT T/R MOSFET N-CH 30V .1A SOT-323 TRANSISTOR SWITCHING MOSFET N-CH SMD MOSFET 30V 0,1A UMT3
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

对参数有疑问？问 AI 助手

Business

Other Names	2SK3018T106TR	Product Category	MOSFET
Standard Package	Tape & Reel	Factory Pack Quantity	3000

RoHS

Lead free / RoHS Compliant

Tariff No

85412900

FET Type	MOSFET N-Channel, Metal Oxide	Fall Time	35 ns
Vgs (Max)	±20 V	FET Feature	Logic Level Gate, 2.5V Drive
Power - Max	200mW	Power - Rated	200 mW
Rise Time (Typ)	35 ns	Transistor Type	N-Channel
Delay to 1st Tap	80 ns	Vgs(th) (Max) @ Id	1.5V @ 100µA
Voltage - Breakdown	30 V	Voltage - Threshold	:1.5V
Current Rating (Max)	:100mA	Resistance - RDS(On)	:8ohm
Contact Voltage (Max)	:30V	Rds On (Max) @ Id, Vgs	8000@4V mOhm
Power Dissipation (Max)	:200mW	Propagation Delay (Max)	35 ns
Vce(on) (Max) @ Vge, Ic	30 V	Switch Time (Ton, Toff) (Max)	15 ns
Drain to Source Voltage (Vdss)	30V	Current - Peak Pulse (10/1000us)	0.1 A
Voltage - Gate Trigger (Vgt) (Max)	+/- 20 V	Current - Drain (Idss) @ Vds (Vgs=0)	0.1 A
Input Capacitance (Ciss) (Max) @ Vds	13pF @ 5V	Current - Continuous Drain (Id) @ 25degC	100mA (Ta)

Channel Type

Enhancement

Configuration

Single

Operating Temperature

-55 to 150 °C

PDF Document

PDF Document

PDF Document