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NP36P06KDG-E1-AY
| Manufacturer | |
| Description | Trans MOSFET P-CH 60V 36A 3-Pin(2+Tab) TO-263 T/R NP36P06KDG-E1-AY MOSFET P-CH -60V -36A TO-263 |
| Category |
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Business
| MOQ | 1 | Unit Pack | 0 |
| Other Names | NP36P06KDG-E1-AYDKR | Standard Package | Tape & Reel |
Compliance
| RoHS | Lead free / RoHS Compliant | ||
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Vgs (Max) | ±20 V |
| FET Feature | Logic Level Gate | Power - Max | 1.8W |
| Fall Time (Typ) | 110 ns | Delay to 1st Tap | 210 ns |
| Vgs(th) (Max) @ Id | 2.5V @ 1mA | Voltage - Breakdown | 60 V |
| Rds On (Max) @ Id, Vgs | 29.5@10V mOhm | Propagation Delay (Max) | 11 ns |
| Gate Charge (Qg) (Max) @ Vgs | 54nC @ 10V | Switch Time (Ton, Toff) (Max) | 8 ns |
| Drain to Source Voltage (Vdss) | 60V | Current - Peak Pulse (10/1000us) | 36 A |
| Input Capacitance (Ciss) (Max) @ Vds | 3100pF @ 10V | Current - Continuous Drain (Id) @ 25degC | 36A (Tc) |
Mechanical
| Packaging | Tape & Reel (TR) | Mounting Type | Surface Mount |
| Package / Case | 3TO-263 | Supplier Device Package | TO-263 |
Product Info
| Channel Type | P | ||
Environmental
| Operating Temperature | -55 to 175 °C | ||
Documents & Media
PDF Document
PDF Document