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NP36P04KDG-E1-AY

Manufacturer	Renesas Electronics Corporation
Description	Trans MOSFET P-CH 40V 36A 3-Pin(2+Tab) TO-263 T/R NP36P04KDG-E1-AY MOSFET P-CH -40V -36A TO-263
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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MOQ	1	Unit Pack	0
Standard Package	Tape & Reel

RoHS

Lead free / RoHS Compliant

FET Type	MOSFET P-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Logic Level Gate	Power - Max	1.8W
Fall Time (Typ)	140 ns	Delay to 1st Tap	250 ns
Vgs(th) (Max) @ Id	2.5V @ 1mA	Voltage - Breakdown	40 V
Rds On (Max) @ Id, Vgs	17@10V mOhm	Propagation Delay (Max)	10 ns
Gate Charge (Qg) (Max) @ Vgs	55nC @ 10V	Switch Time (Ton, Toff) (Max)	8 ns
Drain to Source Voltage (Vdss)	40V	Current - Peak Pulse (10/1000us)	36 A
Input Capacitance (Ciss) (Max) @ Vds	2800pF @ 10V	Current - Continuous Drain (Id) @ 25degC	36A (Tc)