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NP100P04PDG-E1-AY

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NP100P04PDG-E1-AY

Manufacturer
Description
Trans MOSFET P-CH 40V 100A 3-Pin(2+Tab) TO-263 T/R MOSFET P-CH -40V MP-25ZP/TO-263 MOSFET -40V 4mOhm AECQ TO263
Category
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Business

Standard PackageTape & ReelStandard Package NameD2PAK

Compliance

RoHSLead free / RoHS CompliantEU RoHSCompliant
AutomotiveNORad HardenedNo
Leadfree DefinRoHS-conform

Electrical

FET TypeMOSFET P-Channel, Metal OxideVgs (Max)±20 V
FET FeatureLogic Level GatePower - Max1.8W
Power - Rated1.8 WFall Time (Typ)100 ns
Delay to 1st Tap300 nsNumber of Elements1
Vgs(th) (Max) @ Id2.5V @ 1mADiode ConfigurationNO
Voltage - Breakdown40 VRds On (Max) @ Id, Vgs3.5@10V mOhm
Power Dissipation (Max)1800Propagation Delay (Max)30 ns
Vce(on) (Max) @ Vge, Ic40 VLogic Voltage - VIL, VIHYES
Power (Watts) - Per Port200 WOn-State Resistance (Max)0.0035 ohm
Idle Current, Typ @ 25degC-100 AVoltage - Supply (Vcc/Vdd)-40 V
Gate Charge (Qg) (Max) @ Vgs320nC @ 10VSwitch Time (Ton, Toff) (Max)38 ns
Drain to Source Voltage (Vdss)40VCurrent - Peak Pulse (10/1000us)100 A
Current - Drain (Idss) @ Vds (Vgs=0)100 AInput Capacitance (Ciss) (Max) @ Vds15100pF @ 10V
Current - Continuous Drain (Id) @ 25degC100A (Tc)

Mechanical

Width9.15PackagingTape and Reel
Tab WidthTabLead StyleGull-wing
Mounting TypeSurface MountPackage / Case3TO-263
Package CooledTO-263Length - Overall10
Package QuantityTO-263Number of Positions3
Shell Size - Insert4.45Supplier Device PackageTO-263

Product Info

TypePower MOSFETPolarityP
TechnologyNP-SeriesChannel TypeP
ConfigurationP-CHPrinted Circuit Board2

Environmental

Operating Temperature-55 to 175 °C

Documents & Media

PDF Document
PDF Document