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FK8V03040L

Manufacturer	Panasonic Corporation
Description	MOSFET Nch MOS FET MOSFET N CH 33V 10A WMINI8-F1 MOSFET N-Channel 33V 10A WMini8-F1 Panasonic N沟道 MOSFET 晶体管 , 12 A, Vds=33 V, 8针 WMini8-F1封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Business

Other Names	FK8V03040LTR	Standard Pack	3,000
Standard Package	3,000	Factory Pack Quantity	3000

RoHS

RoHS Compliant

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	±20 V
FET Feature	Standard	Power - Max	1W
Power - Rated	1 W	Delay Time - ON	9 ns
Output Function	消耗	Transistor Type	N-Channel
Delay Time - OFF	46 ns	Delay to 1st Tap	46 ns
Voltage - Supply	33 V	Number of Channels	1 Channel
Number of Elements	1	Resistance - Input	19 mΩ
Vgs(th) (Max) @ Id	2.5V @ 1.12mA	Voltage - Breakdown	33 V
Rds On (Max) @ Id, Vgs	7 mOhms	Power - Average Forward	1 W
Power Dissipation (Max)	1.5 W	Vce(on) (Max) @ Vge, Ic	33 V
On-State Resistance (Max)	19 mΩ	Gate Charge (Qg) (Max) @ Vgs	7.2nC @ 4.5V
Switch Time (Ton, Toff) (Max)	9 ns	Drain to Source Voltage (Vdss)	33V
Current - Peak Pulse (10/1000us)	12 A	Voltage - Gate Trigger (Vgt) (Max)	20 V
Current - Drain (Idss) @ Vds (Vgs=0)	10 A	Input Capacitance (Ciss) (Max) @ Vds	750pF @ 10V
Current - Continuous Drain (Id) @ 25degC	10A (Ta)

Operating Temperature

+150 °C