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DMG564010R
| Manufacturer | |
| Description | Transistors Bipolar - BJT Composite Transistor w/ Built n Resistor TRANS PREBIAS NPN/PNP SMINI6 Bipolar Transistors - BJT Composite Transistor w/ Built n Resistor |
| Category |
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Business
| Other Names | DMG564010RTR | Standard Pack | 3,000 |
| Standard Package | 3,000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Power - Max | 150mW | Transistor Type | NPN/PNP |
| Voltage - Supply | - 50 V | Resistor - Base (R1) | 10k |
| Power - Average Forward | 150 mW | Power Dissipation (Max) | 150 mW |
| Resistor - Emitter Base (R2) | 10k | Vce Saturation (Max) @ Ib, Ic | 250mV @ 500µA, 10mA |
| Current - Collector (Ic) (Max) | 100mA | Current - Collector Cutoff (Max) | 100 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 35 | ||
Mechanical
| Packaging | Reel | Mounting Type | Surface Mount |
| Package / Case | SMini6-F3-B | Supplier Device Package | SMini6-F3-B |
Product Info
| Manufacturer | Panasonic | ||
Documents & Media
PDF Document