| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 55 ns |
| Vgs (Max) | 10 V | FET Feature | Logic Level Gate, 1.8V Drive |
| Power - Max | 540mW | Power - Rated | 540 mW |
| Rise Time (Typ) | 8 ns | Transistor Type | P-Channel |
| Delay to 1st Tap | 57 ns | Number of Channels | 1 Channel |
| Vgs(th) (Max) @ Id | 1.1V @ 1mA | Rds On (Max) @ Id, Vgs | 120 mOhm @ 1A, 4V |
| Power - Average Forward | 540 mW | Vce(on) (Max) @ Vge, Ic | 20 V |
| On-State Resistance (Max) | 80 mOhms | Drain to Source Voltage (Vdss) | 20V |
| Voltage - Gate Trigger (Vgt) (Max) | +/- 10 V | Current - Drain (Idss) @ Vds (Vgs=0) | 2 A |
| Input Capacitance (Ciss) (Max) @ Vds | 300pF @ 10V | Current - Continuous Drain (Id) @ 25degC | 2A |
