HCT802TX
| Manufacturer | |
| Description | DUAL ENHANCEMENT MODE MOSFET |
| Category |
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Electrical
| Inductance | 170/200 S | Power - Rated | 0.5 W |
| Delay Time - ON | 15/50 ns | Delay Time - OFF | 17/50 ns |
| Resistance - RDS(On) | 5 Ohms | Current Drain (Id) - Max | 1.5/-1.1 A |
| Drain to Source Voltage (Vdss) | 90 V | ||
Mechanical
| Polarization | N-Channel and P-Channel | Package Cooled | SMD-6 |
Product Info
| Type | Dual Enhanced Mode | ||
Environmental
| Operating Temperature | -55 to 150 °C | ||