RM12N650T2
| Manufacturer | |
| Description | MOSFET N-CH 650V 11.5A TO220-3 |
| Category |
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Compliance
| Part Status | Active | Qualification | - |
Electrical
| FET Type | N-Channel | Vgs (Max) | ±30V |
| FET Feature | - | Vgs(th) (Max) @ Id | 4V @ 250µA |
| Rds On (Max) @ Id, Vgs | 360mOhm @ 7A, 10V | Power Dissipation (Max) | 101W (Tc) |
| Drain to Source Voltage (Vdss) | 650 V | Input Capacitance (Ciss) (Max) @ Vds | 870 pF @ 50 V |
| Drive Voltage (Max Rds On, Min Rds On) | 10V | Current - Continuous Drain (Id) @ 25degC | 11.5A (Tc) |
Mechanical
| Packaging | Tube | Mounting Type | Through Hole |
| Package / Case | TO-220-3 | Supplier Device Package | TO-220-3 |
Product Info
| Mfr | Rectron USA | Grade | - |
| Series | - | Technology | MOSFET (Metal Oxide) |
Environmental
| Operating Temperature | -55°C ~ 150°C (TJ) | ||
Documents & Media
PDF Document
PDF Document