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FQI30N06LTU
| Manufacturer | |
| Description | MOSFET |
| Category |
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Compliance
| RoHS | No | ||
Electrical
| Fall Time | 110 ns | Power - Rated | 3.75 W |
| Rise Time (Typ) | 210 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 60 ns | Rds On (Max) @ Id, Vgs | 0.035 Ohms |
| Vce(on) (Max) @ Vge, Ic | 60 V | Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 32 A | ||
Mechanical
| Packaging | Rail | Mounting Style | SMD/SMT |
| Package / Case | I2PAK | ||
Product Info
| Configuration | Single | ||
Environmental
| Mechanical Life | Obsolete | Operating Temperature | + 175 C |