| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 12 ns |
| FET Feature | Logic Level Gate | Power - Max | 1.25W |
| Power - Rated | 2.4 W | Rise Time (Typ) | 77 ns |
| Transistor Type | N-Channel | Delay to 1st Tap | 25 ns |
| Vgs(th) (Max) @ Id | 2V @ 250µA | Rds On (Max) @ Id, Vgs | 0.0048 Ohms |
| Vce(on) (Max) @ Vge, Ic | 24 V | Gate Charge (Qg) (Max) @ Vgs | 17.7nC @ 5V |
| DC Resistance (DCR) - Primary | 38 S | Drain to Source Voltage (Vdss) | 24V |
| Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V | Current - Drain (Idss) @ Vds (Vgs=0) | 85 A |
| Input Capacitance (Ciss) (Max) @ Vds | 2050pF @ 20V | Current - Continuous Drain (Id) @ 25degC | 12A (Ta), 85A (Tc) |
