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NTD110N02RT4G
| Manufacturer | |
| Description | Trans MOSFET N-CH 24V 32A 3-Pin(2+Tab) DPAK T/R MOSFET N-CH 24V 12.5A DPAK MOSFET 24V 110A N-Channel |
| Category |
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Business
| Other Names | NTD110N02RT4GOSCT | Product Category | MOSFET |
| Standard Package | Tape & Reel, Cut Tape | Factory Pack Quantity | 2500 |
| Standard Package Name | DPAK | ||
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
| Rad Hardened | No | ||
Electrical
| FET Type | MOSFET N-Channel, Metal Oxide | Fall Time | 21 ns |
| Vgs (Max) | ±20 V | FET Feature | Logic Level Gate |
| Power - Max | 1.5W | Noise Figure | Not Required dB |
| Power - Rated | 2.88 W | Power - Output | Not Required dB |
| Fall Time (Typ) | 21 ns | Frequency - Max | Not Required MHz |
| Rise Time (Typ) | 39 ns | Transistor Type | N-Channel |
| Delay to 1st Tap | 27 ns | Number of Channels | 1 Channel |
| Number of Elements | 1 | Vgs(th) (Max) @ Id | 2V @ 250µA |
| Voltage - Breakdown | 24 V | Rds On (Max) @ Id, Vgs | 4.6@10V mOhm |
| Power - Average Forward | 2.88 W | Power Dissipation (Max) | 2880 |
| Propagation Delay (Max) | 39 ns | Vce(on) (Max) @ Vge, Ic | 24 V |
| Current Drain (Id) - Max | 32 A | On-State Resistance (Max) | 0.0046 ohm |
| Current Transfer Ratio (Min) | 44 S | Gate Charge (Qg) (Max) @ Vgs | 28nC @ 4.5V |
| Switch Time (Ton, Toff) (Max) | 11 ns | Vce Saturation (Max) @ Ib, Ic | Not Required % |
| Drain to Source Voltage (Vdss) | 24V | Current - Peak Pulse (10/1000us) | 32 A |
| Voltage - Gate Trigger (Vgt) (Max) | +/- 20 V | Current - Drain (Idss) @ Vds (Vgs=0) | 110 A |
| Input Capacitance (Ciss) (Max) @ Vds | 3440pF @ 20V | Current - Continuous Drain (Id) @ 25degC | 12.5A (Ta), 110A (Tc) |
Mechanical
| Width | 6.22 mm | Height | 2.38 mm |
| Length | 6.73 mm | Packaging | Tape and Reel |
| Lead Style | Gull-wing | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Package / Case | 3DPAK |
| Package Cooled | DPAK | Package Quantity | DPAK |
| Number of Positions | 3 | Supplier Device Package | D-Pak |
Product Info
| Type | Power MOSFET | Series | NTD110N02R |
| Polarity | N | Technology | Si |
| Channel Type | Enhancement | Manufacturer | ON Semiconductor |
| Configuration | Single | ||
Environmental
| Operating Temperature | -55 to 175 °C | ||
Documents & Media
PDF Document
