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2SK3666-3-TB-E
| Manufacturer | |
| Description | Trans JFET N-CH 30V 10mA 3-Pin CP T/R JFET N-CH 10MA 200MW 3CP JFET SWITCHING DEVICE ON Semiconductor N通道 JFET 晶体管 30 V, Idss: 1.2 → 3mA, 3针 CP封装 |
| Category |
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Business
| Other Names | 869-1107-1 | Standard Package | Tape & Reel |
| Factory Pack Quantity | 3000 | ||
Compliance
| RoHS | Lead free / RoHS Compliant | EU RoHS | Compliant |
Electrical
| FET Type | N-Channel | Vgs (Max) | -30 V |
| Capacitance | 4pF | Power - Max | 200mW |
| Rds On (Typ) | 200 Ohm | Transistor Type | N-Channel |
| Voltage - Supply | 30 V | Resistance - Input | 200 Ω |
| Vgs(th) (Max) @ Id | 10mA | Voltage - Breakdown | 30 V |
| Resistance - RDS(On) | 200 Ohm | Power - Average Forward | 200 mW |
| Power Dissipation (Max) | 200 | Vce(on) (Max) @ Vge, Ic | 30 V |
| Current Drain (Id) - Max | 10mA | On-State Resistance (Max) | 200 Ohms |
| Current Transfer Ratio (Min) | 3 ms | Gate Charge (Qg) (Max) @ Vgs | -20 V |
| Drain to Source Voltage (Vdss) | 30V | Voltage - Cutoff (VGS off) @ Id | 180mV @ 1µA |
| Current - Peak Pulse (10/1000us) | 10 mA | Voltage - Gate Trigger (Vgt) (Max) | -30V |
| Current - Drain (Idss) @ Vds (Vgs=0) | 1.2mA @ 10V | Input Capacitance (Ciss) (Max) @ Vds | 4pF @ 10V |
| Current - Continuous Drain (Id) @ 25degC | 10 mA | ||
Mechanical
| Width | 1.5mm | Height | 1.1mm |
| Length | 2.9mm | Packaging | Tape and Reel |
| Lead Style | Gull-wing | Mounting Type | Surface Mount |
| Mounting Style | SMD/SMT | Number of Pins | 3 |
| Package / Case | 3CP | Length - Overall | 2.9 |
| Package Quantity | CP | Size / Dimension | 2.9 x 1.5 x 1.1mm |
| Number of Positions | 3 | Shell Size - Insert | 1.1 |
| Supplier Device Package | 3-CP | ||
Product Info
| Series | 2SK3666 | Function | Y |
| Channel Type | N | Manufacturer | ON Semiconductor |
| Configuration | Single | Channels per IC | 单 |
| Printed Circuit Board | 3 | ||
Environmental
| Operating Temperature | -55 to 150 °C | ||
Documents & Media
PDF Document
PDF Document