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2N7002,215

Manufacturer	NXP Semiconductors N.V.
Description	Trans MOSFET N-CH 60V 0.3A 3-Pin TO-236AB T/R MOSFET N-CH 60V 300MA SOT-23 2N7002,215, N-channel MOSFET Transistor 0.3A 60V, 3-Pin TO-236AB MOSFET, N CH, 60V, 300MA, SOT-23-3 NXP N沟道 Si MOSFET , 300 mA, Vds=60 V, 3针 TO-236AB封装
Category	Discrete Semiconductor ComponentsIGBTsDiscrete IGBTs

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Other Names	568-1369-1	Standard Package	Cut Tape
Standard Package Name	SOT-23

FET Type	MOSFET N-Channel, Metal Oxide	Vgs (Max)	30 V
FET Feature	Logic Level Gate	Power - Max	830mW
Noise Figure	Not Required dB	Power - Rated	0.83 W
Power - Output	Not Required dB	Frequency - Max	Not Required MHz
Transistor Type	:N Channel	Number of Elements	1
Vgs(th) (Max) @ Id	2.5V @ 250µA	Voltage - Breakdown	60 V
Voltage - Threshold	:2V	Resistance - RDS(On)	:2.8ohm
Rds On (Max) @ Id, Vgs	5000@10V mOhm	Power Dissipation (Max)	0.83 W
Vce(on) (Max) @ Vge, Ic	60 V	Current Drain (Id) - Max	0.3 A
On-State Resistance (Max)	5 Ω	Vce Saturation (Max) @ Ib, Ic	Not Required %
Drain to Source Voltage (Vdss)	60V	Current - Peak Pulse (10/1000us)	0.3 A
Current - Drain (Idss) @ Vds (Vgs=0)	0.3 A	Input Capacitance (Ciss) (Max) @ Vds	50pF @ 10V
Current - Continuous Drain (Id) @ 25degC	300mA (Ta)

Operating Temperature

-65 to 150 °C

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