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NTE2716
| Manufacturer | |
| Description | EPROM; 16K NMOS UV Erasable; 350 ns; 5.25 V (Max.); 5.25 V (Max.); 20 ns; DIP EPROM UV 16K-Bit 2K x 8 350ns 24-Pin DIP IC, UV EPROM, 16K INTEGRATED CIRCUIT EPROM NMOS 16K 350NS24-LEAD DIP UV ERASABLE |
| Category |
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Compliance
| Tariff No | 85423255 | ||
Electrical
| Memory | :2K x 8bit | Interface | Bus |
| Access Time | :350ns | Capacitance | 8 pF |
| Memory Size | :16Kbit | Memory Type | :EPROM - UV |
| Voltage - VCCB | :5V | Rise Time (Typ) | 20 ns |
| Current - Output | 100 mA (Max.) (Active) | Voltage - Supply | :4.75V |
| Current - Leakage | 10 μA | Capacitance - Input | 4 pF |
| Current Rating - AC | 100 mA | Voltage - Input (Min) | 6 V |
| Rise / Fall Time (Typ) | 20 ns | Input Logic Level - High | 2.0 V (Min.) |
Mechanical
| Weight | 0.003333 | Termination | :Through Hole |
| Number of Pins | :24 | Package / Case | :DIP |
| Package Cooled | DIP | Material Finish | :- |
Product Info
| Density | 16K | Manufacturer | 2K×8 |
| Programmable | 5.25 V (Max.) | ||
Environmental
| Operating Temperature | :0°C | Operating Temperature - Junction | 70 °C |