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BFU520YX
| Manufacturer | |
| Description | RF Bipolar Transistors Dual NPN wideband Silicon RFtransistor |
| Category |
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Business
| Factory Pack Quantity | 3000 | ||
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| Frequency | 900 MHz | Transistor Type | NPN |
| Voltage - Supply | 16 V | Gain Bandwidth Product | 10 GHz |
| Power - Average Forward | 450 mW | Vce(on) (Max) @ Vge, Ic | 24 V |
| Vce Saturation (Max) @ Ib, Ic | 2 V | Current - Collector Cutoff (Max) | 50 mA |
| DC Current Gain (hFE) (Min) @ Ic, Vce | 200 | ||
Mechanical
| Packaging | Reel | Mounting Style | SMD/SMT |
| Package / Case | SOT363-6 | ||
Product Info
| Series | NPI Part Build_RF Transistors | Technology | Si |
| Manufacturer | Nexperia | Configuration | Dual |
Environmental
| Operating Temperature | + 150 C | ||