点击放大查看
VP0106N3-G
| Manufacturer | |
| Description | MOSFET P-CH 60V 250MA 3TO-92 MOSFET 60V 8Ohm |
| Category |
对参数有疑问？问 AI 助手
Business
| Standard Package | 1,000 | Factory Pack Quantity | 1000 |
Compliance
| RoHS | RoHS Compliant | ||
Electrical
| FET Type | MOSFET P-Channel, Metal Oxide | Fall Time | 4 ns |
| Vgs (Max) | 20 V | FET Feature | Standard |
| Power - Max | 1W | Rise Time (Typ) | 5 ns |
| Transistor Type | P-Channel | Delay to 1st Tap | 8 ns |
| Number of Channels | 1 Channel | Vgs(th) (Max) @ Id | 3.5V @ 1mA |
| Rds On (Max) @ Id, Vgs | 8 Ohm @ 500mA, 10V | Power - Average Forward | 1 W |
| Vce(on) (Max) @ Vge, Ic | - 60 V | On-State Resistance (Max) | 8 Ohms |
| Switch Time (Ton, Toff) (Max) | 4 ns | Drain to Source Voltage (Vdss) | 60V |
| Input Capacitance (Ciss) (Max) @ Vds | 60pF @ 25V | Current - Continuous Drain (Id) @ 25degC | 250mA (Tj) |
Mechanical
| Width | 4.19 mm | Height | 5.33 mm |
| Length | 5.21 mm | Packaging | * |
| Mounting Type | * | Mounting Style | Through Hole |
| Package / Case | * | Supplier Device Package | * |
Product Info
| Type | FET | Technology | Si |
| Channel Type | Enhancement | Manufacturer | Microchip Technology |
| Configuration | Single | ||
Environmental
| Operating Temperature | + 150 C | ||
Documents & Media
Online Document