ONEIC.US
DN2540N3-G

点击放大查看

DN2540N3-G

Manufacturer
Description
MOSFET N-CH 400V 120MA 3TO-92 Small Signal FET TO-92 N 400 V, DN2540N3-G, Microchip Microchip , N沟道 MOSFET, 120 mA, Vds=400 V, 3针 TO-92封装 MOSFET 400V 25Ohm
Category
对参数有疑问?问 AI 助手

Business

Standard Package1,000Factory Pack Quantity1000

Compliance

RoHSRoHS Compliant

Electrical

FET TypeMOSFET N-Channel, Metal OxideFall Time20 ns
Vgs (Max)20 VFET FeatureDepletion Mode
Power - Max1WPower - Rated1
Delay Time - ON10 nsOutput Function消耗
Rise Time (Typ)15 nsTransistor TypeSi
Delay Time - OFF15 nsDelay to 1st Tap15 ns
Voltage - Supply400 VNumber of Channels1 Channel
Number of Elements1Resistance - Input25 Ω
Vgs(th) (Max) @ Id3.5VRds On (Max) @ Id, Vgs25 Ohm @ 120mA, 0V
Power - Average Forward1 WPower Dissipation (Max)1 W
Vce(on) (Max) @ Vge, Ic400 VOn-State Resistance (Max)25 Ohms
Gate Charge (Qg) (Max) @ Vgs±20 VSwitch Time (Ton, Toff) (Max)10 ns
Drain to Source Voltage (Vdss)400VResistance - Post Trip (R1) (Max)25 Ohm@ 120 mA
Current - Drain (Idss) @ Vds (Vgs=0)150 mAInput Capacitance (Ciss) (Max) @ Vds300pF @ 25V
Current - Continuous Drain (Id) @ 25degC120mA (Tj)

Mechanical

Width0.165inHeight0.21in
Length5.2mmPackaging*
Mounting Type*Mounting StyleThrough Hole
Number of Pins3Package / Case*
Package QuantityTO-92Size / Dimension0.205 x 0.165 x 0.21in
Supplier Device Package*

Product Info

TypeFETFunctionY
PolarityNTechnologySi
Channel TypeNManufacturerMicrochip Technology
ConfigurationSingleVariation SuffixDepletion mode
Other Specifications400 V

Environmental

Operating Temperature+150 °C

Documents & Media

Online Document